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US 2016/0079463 A1Published application
Interdigitated back contact heterojunction photovoltaic device
AssigneeInternational Business Machines Corporation
InventorsTZE-CHIANG CHEN, BAHMAN HEKMATSHOARTABARI, DEVENDRA K. SADANA, DAVOOD SHAHRJERDI
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Abstract
A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.
Claims9
A photovoltaic device, comprising:
- a crystalline substrate having a first dopant conductivity;
- an interdigitated back contact, the interdigitated back contact including back surface field stacks and emitter stacks;
- and
- a front surface field structure comprising a crystalline layer formed on the substrate and an amorphous layer formed on the crystalline layer, the crystalline layer and the noncrystalline layer being doped with dopants having a same dopant conductivity as the substrate;
- wherein the back surface field stacks and the emitter stacks alternate and each of the back surface field stacks and the emitter stacks includes an intrinsic layer formed on the interdigitated back contact.
2 more elements
Dependencies are inferred from the claim text.