Reduced light degradation due to low power deposition of buffer layer

A method for forming a photovoltaic device, comprising:

• forming a transparent electrode on a transparent substrate;
• depositing a buffer layer on the transparent electrode, the buffer layer being deposited at a deposition power to provide an amorphous germanium layer with a work function that falls substantially in a middle of a barrier formed between adjacent layers to the buffer layer to provide a greater resistance to light induced degradation;
• depositing a p-type layer on the buffer layer;
• forming an intrinsic layer on the p-type layer;
• and
• forming an n-type layer on the intrinsic layer.

A method for forming a photovoltaic device, comprising:

• forming a transparent conductive oxide on a transparent substrate;
• depositing a buffer layer including germanium on the transparent conductive oxide, the buffer layer being deposited at a deposition power of less than about 0.05 Watts per square centimeter to adjust a work function of the buffer layer, wherein the deposition power is a sole deposition parameter being adjusted to adjust said work function;
• and
• depositing a p-type amorphous silicon carbide layer on the buffer layer such that the work function of the buffer layer falls substantially in a middle of a barrier between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation.