Thin refractory metal layer used as contact barrier to improve the performance of thin-film solar cells

A method for making a thin film amorphous silicon solar cell comprising a hydrogenated amorphous silicon layer, and a transparent conductive oxide layer under the hydrogenated amorphous silicon layer, the method comprising:

• depositing the transparent conductive oxide layer for a cell contact;
• depositing a layer of refractory metal comprising at least one of molybdenum, tungsten, tantalum, and titanium, with a thickness for a light transmittance of at least 80%, the layer of refractory metal being over a contact surface of the transparent conductive oxide layer;
• and
• plasma enhanced chemical vapor depositing hydrogenated amorphous silicon to grow a cell p-i-n layer, the hydrogenated amorphous silicon being over the layer of refractory metal.

A method for making a solar cell comprising an amorphous silicon layer, and a transparent conductive oxide layer under the amorphous silicon layer, the method comprising:

• forming the transparent conductive oxide layer for a cell contact;
• forming a layer of refractory metal over a contact surface of the transparent conductive oxide layer;
• and
• forming amorphous silicon over the layer of refractory metal.

A method for making a silicon solar cell comprising an amorphous silicon layer, and a transparent conductive oxide layer under the amorphous silicon layer, the method comprising:

• forming the transparent conductive oxide layer for a cell contact;
• forming a layer of refractory metal over a contact surface of the transparent conductive oxide layer to have a light transmittance of at least 80%;
• forming amorphous silicon over the layer of refractory metal;
• and
• texturing a surface of the transparent conductive oxide layer before depositing the layer of refractory metal.