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US 2016/0079452 A1Published application
Photodetector with plasmonic structure and method for fabricating the same
AssigneeAgency for Defense Development
InventorsChulkyun SEOK, Euijoon YOON, Yongjo PARK, Chiyeon KIM
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Abstract
A photodetector with a plasmon structure includes a semiconductor substrate, a plurality of light-receiving elements that are formed in a predetermined pattern, protruding from the semiconductor substrate, and a nanostructure that is placed in contact with a surface of the semiconductor substrate among the light-receiving elements and which induces a plasmon phenomenon thereon.
Claims15
A photodetector with a plasmon structure, comprising:
- a semiconductor substrate;
- a plurality of light-receiving elements that are formed in a predetermined pattern, protruding from the semiconductor substrate;
- and
- a nanostructure that is placed in contact with a surface of the semiconductor substrate among the light-receiving elements and which induces a plasmon phenomenon thereon.
1 more element
A method for fabricating a photodetector with a plasmon structure, comprising:
- preparing a semiconductor wafer;
- patterning a nanostructure on the semiconductor wafer to form a nanopattern capable of inducing a plasmon phenomenon thereon;
- and
- etching the semiconductor wafer to form a plurality of light-receiving elements that protrude from the semiconductor substrate
- wherein the nanostructure is placed in contact with a surface of the semiconductor substrate among the light-receiving elements.
2 more elements
Dependencies are inferred from the claim text.