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US 2016/0079451 A1Published application
Photodiode structures
AssigneeInternational Business Machines Corporation
InventorsJohn J. ELLIS-MONAGHAN, Jeffrey P. GAMBINO, Mark D. JAFFE, Kirk D. PETERSON
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Abstract
Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
Claims20
A method, comprising:
- forming a waveguide structure in a dielectric layer;
- forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer;
- and
- crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
1 more element
A method, comprising:
- forming a waveguide structure in a dielectric material;
- forming a Ge material in the dielectric material and in proximity to the waveguide structure;
- forming at least one via in the dielectric material to expose a surface of the Ge material;
- forming a metal seed layer on sidewalls of the at least one via and in contact with the surface of the Ge material;
- and
- crystallizing the Ge material by a low temperature annealing process with the metal seed layer in contact with the Ge material through a nucleation process.
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A structure, comprising:
- a waveguide structure and metal wiring layers in a dielectric material;
- a single crystalline Ge structure formed in proximity to the waveguide structure in the dielectric material;
- and
- at least one metal filled via in electrical contact with the Ge material.
1 more element
Dependencies are inferred from the claim text.