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US 2016/0079446 A1Published application
Pumping capacitor
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-min CHOI, Ju-youn KIM, Hyun-jo KIM, Mu-kyeng JUNG
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Abstract
A pumping capacitor is provided. The pumping capacitor includes a substrate, a P-type gate layer on the substrate, and a gate dielectric layer between the substrate and the P-type gate layer. The substrate includes an N-type well region and an N-type doping region in the N-type well region.
Claims20
A pumping capacitor, comprising:
- a substrate including an N-type well region and an N-type doping region in the N-type well region;
- a P-type gate layer disposed on the substrate;
- and
- a gate dielectric layer disposed between the substrate and the P-type gate layer.
1 more element
A pumping capacitor, comprising:
- a substrate including an N-type well region and an N-type doping region in the N-type well region;
- a high-k dielectric layer disposed on the substrate, the high-k dielectric layer having a U-shaped section;
- and
- a P-type metal gate layer disposed on the high-k dielectric layer.
1 more element
A pumping capacitor, comprising:
- a substrate including an N-type well region;
- an N-type doping region in the N-type well region, the N-type doping region having a higher dopant concentration than the N-type well region;
- a P-type gate electrode disposed on the substrate;
- and
- a gate dielectric layer interposed between the substrate and the P-type gate electrode.
2 more elements
Dependencies are inferred from the claim text.