Junction barrier schottky diode

Abstract

A JBS diode includes a silicon substrate, a first P doped region, a metal layer, a second P doped region, and a first N doped region. The silicon substrate includes an upper surface. An NBL is provided in the bottom of the silicon substrate. An N well is provided between the upper surface and the NBL. The first P doped region is arranged in the N well, and extending downward from the upper surface. The metal layer covers the upper surface, and located on a side of the first P doped region. The second P doped region is arranged in the N well, extending downward from the upper surface, and located at the other side of the first P doped region. The first N doped region is arranged in the N well, extending downward from the upper surface, and located at the other side of the first P doped region.

Dependencies are inferred from the claim text.