Method for manufacturing semiconductor device and pin diode
AssigneeMitsubishi Electric Corporation
InventorHidenori FUJII
Life of this patent
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Abstract
An IGBT (15) is formed in a semiconductor substrate (1). A temperature sense diode (17) made of polysilicon or amorphous silicon is formed on the semiconductor substrate (1). After forming the IGBT (15), the temperature sense diode (17) is divided into a plurality of diodes by selectively oxidizing or sublimating part of the temperature sense diode (17). Thus, influences of variations in finished dimension of polysilicon on the characteristics can be eliminated. As a result, it is possible to reduce the size while reducing characteristic variations.
Claims14
A method for manufacturing a semiconductor device comprising:
- forming a transistor in a semiconductor substrate;
- forming a PIN diode made of polysilicon or amorphous silicon on the semiconductor substrate;
- and
- after forming the transistor, selectively oxidizing or sublimating part of the PIN diode to divide the PIN diode into a plurality of diodes.
A PIN diode wherein the PIN diode is made of polysilicon or amorphous silicon, and
- part of the PIN diode is selectively oxidized or sublimated so that the PIN diode is divided into a plurality of diodes.
Dependencies are inferred from the claim text.