Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsMasamichi SUZUKI, Yusuke HIGASHI, Riichiro TAKAISHI, Mitsuhiro TOMITA, Kiwamu SAKUMA, Yuichiro MITANI
Life of this patent
Estimating the term…
Abstract
This semiconductor device comprises: a gate insulating film provided on a surface of a channel layer; a gate electrode provided on an upper surface of the gate insulating film; and a diffusion layer provided in the channel layer. Furthermore, this semiconductor device comprises: a polycrystalline silicon film provided so as to cover a surface of the gate electrode and the diffusion layer; and an inter-layer insulating film provided so as to cover the gate electrode and the polycrystalline silicon film.
Claims20
A semiconductor device, comprising:
- a gate insulating film provided on a surface of a channel layer;
- a gate electrode provided on an upper surface of the gate insulating film;
- a diffusion layer provided in the channel layer;
- a polycrystalline silicon film provided so as to cover a surface of the gate electrode and the diffusion layer;
- and
- an inter-layer insulating film provided so as to cover the gate electrode and the polycrystalline silicon film.
Dependencies are inferred from the claim text.