Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMasahiro WATANABE, Mitsuo MASHIYAMA, Takuya HANDA, Kenichi OKAZAKI
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Abstract
To provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and has high reliability. To provide a method for manufacturing the semiconductor device. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, a source electrode and a drain electrode formed over the oxide semiconductor film, and a protective film. The protective film includes a metal oxide film, and the metal oxide film has a film density of higher than or equal to 3.2 g/cm3.
Claims16
(canceled)
A semiconductor device comprising:
- an oxide semiconductor film over an insulating surface;
- a source electrode and a drain electrode over the oxide semiconductor film;
- an oxide insulating film over and in contact with the oxide semiconductor film, the source electrode, and the drain electrode;
- and
- a first metal oxide film over the oxide insulating film,
- wherein the first metal oxide film has a film density of higher than or equal to 3.2 g/cm3,
- wherein the source electrode overlaps with a first end of the oxide semiconductor film, and
- wherein the drain electrode overlaps with a second end of the oxide semiconductor film.
A semiconductor device comprising:
- a gate electrode;
- a gate insulating film over the gate electrode;
- an oxide semiconductor film over the gate insulating film;
- a source electrode and a drain electrode over the oxide semiconductor film;
- and
- a protective film over the oxide semiconductor film, the source electrode, and the drain electrode,
- wherein the protective film is a stack in which a first metal oxide film is provided over an oxide insulating film,
- wherein the oxide insulating film is in contact with the oxide semiconductor film,
- wherein the first metal oxide film has a film density of higher than or equal to 3.2 g/cm3,
- wherein the source electrode overlaps with a first end of the oxide semiconductor film, and
- wherein the drain electrode overlaps with a second end of the oxide semiconductor film.
Dependencies are inferred from the claim text.