Method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei YAMAZAKI
Life of this patent
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Abstract
Provided is a transistor containing a semiconductor with low density of defect states, a transistor having a small subthreshold swing value, a transistor having a small short-channel effect, a transistor having normally-off electrical characteristics, a transistor having a low leakage current in an off state, a transistor having excellent electrical characteristics, a transistor having high reliability, or a transistor having excellent frequency characteristics. An insulator is formed, a layer is formed over the insulator, oxygen is added to the insulator through the layer, the layer is removed, an oxide semiconductor is formed over the insulator to which the oxygen is added, and a semiconductor element is formed using the oxide semiconductor.
Claims17
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an insulator;
- forming a layer over the insulator;
- adding oxygen to the insulator through the layer;
- after adding the oxygen, removing the layer;
- after removing the layer, forming an oxide semiconductor over the insulator to which the oxygen is added;
- and
- forming a semiconductor element comprising the oxide semiconductor.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide insulator;
- forming a layer over the oxide insulator;
- adding oxygen to the oxide insulator through the layer;
- after adding the oxygen, removing the layer;
- after removing the layer, forming an oxide semiconductor over the oxide insulator to which the oxygen is added;
- and
- forming a semiconductor element comprising the oxide semiconductor.
Dependencies are inferred from the claim text.