Top gate tft with polymer interface control layer
AssigneeEastman Kodak Company
InventorsCarolyn Rae Ellinger, Shelby Forrester Nelson
Life of this patent
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Abstract
A transistor includes a substrate and a polymer layer that is in contact with the substrate. The polymer layer has a first pattern defining a first area. There is an inorganic semiconductor layer over and in contact with the polymer layer that has a second pattern defining a second area. The first area is located within the second area. There is a source electrode in contact with a first portion of the semiconductor layer and a drain electrode in contact with a second portion of the semiconductor layer, and the source electrode and the drain electrode separated by a gap. A gate insulating layer is in contact with the inorganic semiconductor layer in the gap. There is a gate in contact with the gate insulating layer over the gap.
Claims11
A transistor comprising:
- a substrate;
- a polymer layer in contact with the substrate, the polymer layer having a first pattern defining a first area;
- an inorganic semiconductor layer over and in contact with the polymer layer and having a second pattern defining a second area, the first area located within the second area;
- a source electrode in contact with a first portion of the semiconductor layer;
- a drain electrode in contact with a second portion of the semiconductor layer, the source electrode and the drain electrode separated by a gap;
- a gate insulating layer in contact with the inorganic semiconductor layer in the gap;
- and
- a gate in contact with the gate insulating layer over the gap.
Dependencies are inferred from the claim text.