Device having epi film in substrate trench
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJeff J. Xu
Life of this patent
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Abstract
The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a trench in the substrate, where a bottom surface of the trench has a first crystal plane orientation and a side surface of the trench has a second crystal plane orientation, and epitaxially (epi) growing a semiconductor material in the trench. The epi process utilizes an etch component. A first growth rate on the first crystal plane orientation is different from a second growth rate on the second crystal plane orientation.
Claims20
A finFET semiconductor device, comprising:
- a fin extending from a substrate;
- shallow trench isolation features abutting a bottom region of the fin;
- a gate structure disposed over a top region of the fin;
- a trench in the fin adjacent the gate structure, wherein a bottom surface of the trench has a first crystal plane orientation of the substrate, two opposing side surfaces of the trench have a second crystal plane orientation, and two opposing lateral surfaces of the trench defined by the shallow trench isolation features;
- wherein the second crystal plane orientation is [110] crystal plane orientation and the first crystal plane orientation is different than the second crystal plane orientation;
- and
- an epitaxy feature formed within the trench in the fin, wherein a side surface of the epitaxy feature interfaces the [110] crystal plane orientation.
A semiconductor device, comprising:
- a first gate structure disposed over a fin of semiconductor material extending from a semiconductor substrate;
- a first trench in the semiconductor material of the fin adjacent the first gate structure, wherein a bottom surface of the first trench has a first crystal plane orientation of the semiconductor material, and at least one side surface of the first trench has a second crystal plane orientation of the semiconductor material, the first crystal plane orientation being different from the second crystal plane orientation;
- and
- a substantially pure germanium (Ge) epitaxy feature formed within the first trench in the fin and interfacing the bottom surface and the side surface of the first trench, wherein the substantially pure Ge epitaxy feature has a side surface with a crystal plane orientation defined by the bottom surface of the trench;
- and
- wherein the substantially pure germanium (Ge) epitaxy feature provides one of a source and a drain associated with the first gate structure.
A fin-type field effect transistor (FinFET), comprising:
- a trench in a silicon fin extending from a substrate, wherein a bottom surface of the trench has a first crystal plane orientation of the silicon and a lateral sidewall surface of the trench has a second crystal plane orientation of the silicon, the first crystal plane orientation being different from the second crystal plane orientation;
- and
- a germanium (Ge) epitaxy feature formed within the trench on the substrate, wherein the feature is formed by an epitaxial process including an etch component that prohibits Ge epitaxy from growing from the second crystal plane orientation, thereby providing the Ge epitaxy feature having a side region adjacent the lateral sidewall surfaces of the trench of an orientation defined by the first crystal plane orientation.
Dependencies are inferred from the claim text.