Strained semiconductor trampoline

A method comprising:

• forming a strain inducing layer on a semiconductor-on-insulator (SOI), the SOI is a semiconductor layer, an insulator layer, and a handle substrate, wherein the semiconductor layer is on the insulator layer and the insulator layer is on the handle substrate, the strain inducing layer is a material with a different atomic alignment than the atomic alignment of the semiconductor layer, wherein the strain inducing layer places a strain on the semiconductor layer;
• forming a hardmask on the strain inducing layer;
• patterning the hardmask;
• forming a opening through the semiconductor layer and through the insulator layer using the patterned hardmask as a mask;
• forming a trampoline support in the opening;
• forming a trench through the strain inducing layer and through the semiconductor layer, the trench exposes a portion of the insulator layer, the trench is adjacent to the trampoline support, a strained trampoline is a portion of the semiconductor layer with a boundary defined by the trampoline support and the trench;
• and
• removing the insulator layer from beneath the strained trampoline through the trench, wherein the strained trampoline is supported by the trampoline support.