Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorAtsushi MURAKOSHI
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Abstract
According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include an ion implantation process of performing ion implantation of an ion species including at least one type of atom of boron, antimony, arsenic, phosphorus, or indium into a semiconductor region at low temperature, and an electrode formation process of forming a source region and a drain region at two mutually-separated locations on the semiconductor region and forming an electrode in a region directly above the semiconductor region between the source region and the drain regions of the two locations with an insulating film interposed between the electrode and the semiconductor region.
Claims20
A method for manufacturing a semiconductor device, comprising:
- an ion implantation process of performing ion implantation of an ion species including at least one type of atom of boron, antimony, arsenic, phosphorus, or indium into a semiconductor region at low temperature;
- and
- an electrode formation process of forming a source region and a drain region at two mutually-separated locations on the semiconductor region and forming an electrode in a region directly above the semiconductor region between the source region and the drain region with an insulating film interposed between the electrode and the semiconductor region.
A method for manufacturing a semiconductor device, comprising:
- performing ion implantation of an ion species including at least one type of atom of boron, antimony, arsenic, phosphorus, or indium into a semiconductor region at low temperature;
- forming a source region and a drain region at two mutually-separated locations on the semiconductor region;
- forming a first insulating film in a region directly above the semiconductor region between the source region and the drain region;
- performing the ion implantation for the semiconductor region through the first insulating film at low temperature;
- removing the first insulating film;
- forming a second insulating film on the semiconductor region where the first insulating film has been removed;
- and
- forming an electrode on the second insulating film.
A semiconductor device, comprising:
- a semiconductor region;
- an insulating film provided on the semiconductor region;
- a source region and a drain region provided in the semiconductor region to be separated from each other;
- a gate electrode provided on a region directly above the semiconductor region between the source region and the drain region;
- and
- a surface average of roughness height of a surface of the semiconductor region between the source region and the drain region being not more than 0.2 nm, and a maximum difference between highs and lows of the interface being not more than 2 nm.
Dependencies are inferred from the claim text.