Semiconductor Device and Method of Manufacturing the Same

A semiconductor device, comprising:

• a semiconductor layer;
• a source region and a drain region of a first conductivity-type provided separated from each other in the semiconductor layer;
• a first conductivity-type source offset region formed in contact with the source region in the semiconductor layer and in a concentration lower than those in the source region and the drain region;
• a first conductivity-type drain offset region, disposed in contact with the drain region in the semiconductor layer and separated from the source offset region, formed in a concentration lower than those in the source region and the drain region;
• a trench part provided between the source offset region and the drain offset region at least in plan view in the semiconductor layer, and provided in a source-drain direction from the source offset region toward the drain offset region in plan view;
• a gate insulating film that covers a side surface and a bottom surface of the trench part;
• a gate electrode provided at least in the trench part and in contact with the gate insulating film;
• and
• a contact in contact with the gate electrode, shifted in a first direction perpendicular to the source-drain direction relative to the centerline in the trench part extending in the source-drain direction in plan view, and provided in the trench part in plan view.