Semiconductor device

A semiconductor device comprising:

• a first electrode having a first surface;
• a second electrode having a second surface inclined with respect to the first surface and spaced from the first electrode in a first direction;
• a third electrode spaced from the first electrode in a second direction intersecting the first direction;
• and
• a nitride semiconductor layer located between the first surface and the second surface, and between the third electrode and the second surface.

A semiconductor device comprising:

• a nitride semiconductor layer having a first surface and a second surface on an opposite side of the nitride semiconductor layer from the first surface;
• a source electrode located on the first surface;
• a gate electrode located on the first surface;
• and
• a drain electrode located on the second surface positioned such that a planar projection of the drain electrode across the nitride semiconductor does not overlap with the position of the source by more than 10 percent of the surface area of the source electrode.