Semiconductor device

A semiconductor device comprising:

• a first semiconductor layer;
• a second semiconductor layer over the first semiconductor layer and comprising a first semiconductor portion and a second semiconductor portion thinner than the first semiconductor portion;
• a source electrode over the second semiconductor layer and electrically connected to the second semiconductor layer;
• a drain electrode over the second semiconductor layer and electrically connected to the second semiconductor layer;
• a gate electrode over the second semiconductor layer and between the source electrode and the drain electrode;
• and
• a first field plate electrode over the second semiconductor layer and comprising a portion extending from a location over the gate electrode toward the drain electrode, a first end of the first field plate electrode being positioned over the second semiconductor portion, and a second end of the first field plate electrode being positioned over the first semiconductor portion.