Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorKazuo SAKI
Life of this patent
Estimating the term…
Abstract
According to an embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, and a first insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided over the first semiconductor layer, includes a nitride semiconductor, and contains composition different from the composition of the first semiconductor layer. The first insulating film is provided over the second semiconductor layer, covers at least a part of the first electrode, and contains silicon nitride. The hydrogen concentration in the first insulating film is greater than or equal to 5.0×1021 atoms/cm3 and less than or equal to 9.0×1021 atoms/cm3.
Claims20
A semiconductor device comprising:
- a first semiconductor layer comprising a nitride semiconductor;
- a second semiconductor layer located over the first semiconductor layer comprising a nitride semiconductor, the second semiconductor layer having a different composition than the composition of the first semiconductor layer;
- a first electrode located over the second semiconductor layer;
- and
- a first insulating film comprising silicon nitride located over the second semiconductor layer, and covering at least a portion of the first electrode, the first insulating film having a hydrogen concentration greater than or equal to 5.0×1021 atoms/cm3 and less than or equal to 9.0×1021 atoms/cm3.
A method of forming a compound semiconductor device comprising a first semiconductor layer and a second semiconductor layer having different lattice constants, comprising;
- forming a first electrode having a first side and a second side over the second semiconductor layer;
- and
- forming an insulating layer adjacent to, and extending from, the first and second sides of the first electrode and over the second semiconductor layer;
- wherein
- the hydrogen concentration of the insulating layer is greater than or equal to 5.0×1021 atoms/cm3 and less than or equal to 9.0×1021 atoms/cm3.
A semiconductor device comprising a first semiconductor layer and a second semiconductor layer in contact with one another and having different lattice constants, wherein the variation of the ON resistance throughout the device is less than 5 percent.
Dependencies are inferred from the claim text.