Field effect transistor
AssigneeKabushiki Kaisha Toshiba
InventorTakuji YAMAMURA
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Abstract
A field effect transistor includes a multilayer body, a finger source electrode, a finger drain electrode, a finger gate electrode, an insulating layer, and a source field plate. A finger gate electrode includes a bottom part. The bottom part has a first side surface and a second side surface. A source field plate includes a finger part and an interconnect part. A side surface of the finger part is provided between the second side surface of the finger gate electrode and the finger drain electrode. A source terminal electrode covers the finger source electrode and a tip part of the interconnect part. A side surface of the finger source electrode has an opening recessed from the first side surface. And the tip part is extended to a part of the insulating layer exposed in the opening.
Claims19
A field effect transistor comprising:
- a multilayer body made of semiconductor and having a heterojunction generating a two-dimensional electron gas layer;
- a finger source electrode provided on a front surface of the multilayer body;
- a finger drain electrode provided parallel to the finger source electrode on the front surface of the multilayer body;
- a finger gate electrode including a bottom part provided on the front surface of the multilayer body, the bottom part having a first side surface facing the finger source electrode in parallel and a second side surface facing the finger drain electrode in parallel;
- an insulating layer covering the front surface of the multilayer body between the finger gate electrode and the finger source electrode, the front surface of the multilayer body between the finger gate electrode and the finger drain electrode, and the finger gate electrode;
- a source field plate provided on an upper surface of the insulating layer and including a finger part parallel to the finger gate electrode and an interconnect part connected to the finger source electrode, the finger part covering the second side surface via the insulating layer, and a side surface of the finger part facing the finger drain electrode being provided between the second side surface of the finger gate electrode and the finger drain electrode;
- and
- a source terminal electrode covering the finger source electrode and a tip part of the interconnect part,
- a side surface of the finger source electrode facing the first side surface of the finger gate electrode having an opening recessed from the first side surface, and
- the tip part being extended to a part of the insulating layer exposed in the opening.
A field effect transistor comprising:
- a multilayer body including InxGayAl1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1) and having a heterojunction generating a two-dimensional electron gas layer;
- a finger source electrode provided on a front surface of the multilayer body;
- a finger drain electrode provided parallel to the finger source electrode on the front surface of the multilayer body;
- a finger gate electrode including a bottom part provided on the front surface of the multilayer body, the bottom part having a first side surface facing the finger source electrode in parallel and a second side surface facing the finger drain electrode in parallel;
- an insulating layer covering the front surface of the multilayer body between the finger gate electrode and the finger source electrode, the front surface of the multilayer body between the finger gate electrode and the finger drain electrode, and the finger gate electrode;
- a source field plate provided on an upper surface of the insulating layer and including a finger part parallel to the finger gate electrode and an interconnect part connected to the finger source electrode, the finger part covering the second side surface via the insulating layer, and a side surface of the finger part facing the finger drain electrode in parallel being provided between the second side surface of the finger gate electrode and the finger drain electrode;
- and
- a source terminal electrode covering the finger source electrode and a tip part of the interconnect part,
- a side surface of the finger source electrode opposed to the first side surface of the finger gate electrode having an opening recessed from the first side surface, and
- the tip part being extended to a part of the insulating layer exposed in the opening.
Dependencies are inferred from the claim text.