Trench insulated gate bipolar transistor and manufacturing method thereof
AssigneeFuji Electric Co., Ltd.
InventorNaoki MITAMURA
Life of this patent
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Abstract
A trench insulated gate bipolar transistor includes trenches formed in the front surface of a first conductivity type drift layer, a plurality of gate electrodes selectively provided inside the trenches, insulating blocks formed of an insulator, with which the insides of the trenches are filled, one between adjacent gate electrodes, and a second conductivity type collector region formed on a surface of the first conductivity type drift layer on the opposite side from the trenches.
Claims12
A trench insulated gate bipolar transistor, comprising:
- trenches formed in a front surface of a first conductivity type drift layer;
- a plurality of gate electrodes selectively provided inside the trenches;
- insulating blocks formed of an insulator, with which insides of the trenches are filled, one between adjacent gate electrodes;
- and
- a second conductivity type collector region formed on a surface of the first conductivity type drift layer on an opposite side from the trenches.
A trench insulated gate bipolar transistor manufacturing method, comprising:
- a step of filling insides of trenches, formed in portions of a front surface layer of a semiconductor region, with an insulator;
- a step of removing portions of the insulator filling the trenches and selectively exposing the insides of the trenches;
- and
- a step of forming gate electrodes in the selectively exposed insides of the trenches.
A semiconductor device, comprising:
- a semiconductor substrate;
- a plurality of trenches formed in the semiconductor substrate;
- a plurality of gates formed in each of the plurality of trenches, a gate in a respective trench being separated from another gate in the respective trench;
- and
- an insulator formed in each of the plurality of trenches between separated gates.
Dependencies are inferred from the claim text.