Semiconductor device having fin gate, resistive memory device including the same, and method of manufacturing the same
AssigneeSK hynix Inc.
InventorNam Kyun PARK
Life of this patent
Estimating the term…
Abstract
A semiconductor device having a fin gate that improves an operation current, and a method of manufacturing the same. The semiconductor device includes an active pillar formed on a semiconductor substrate, the active pillar including an inner region and an outer region surrounding the inner region, and a fin gate overlapping an upper surface and a lateral surface of the active pillar. The inner portion of the active pillar includes a first semiconductor layer having a first lattice constant, and the outer region of the active pillar includes a second semiconductor layer having a second lattice constant smaller than the first lattice constant.
Claims8
1-13. (canceled)
A method of manufacturing a semiconductor device, the method comprising:
- forming an active pillar on a semiconductor substrate, wherein a material forming an inner portion of the active pillar has a lattice constant larger than a lattice constant of a material forming an outer portion of the active pillar;
- forming a gate insulating layer on a surface of the active pillar;
- and
- forming a fin gate on the gate insulating layer to surround three surfaces of the active pillar.
Dependencies are inferred from the claim text.