Methods of manufacturing semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-Jun SIM, Jae-Young PARK, Sun-Young LEE
Life of this patent
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Abstract
In a method of manufacturing a semiconductor device, a preliminary gate insulation layer is formed on a substrate, and at least a portion of the substrate serves as a channel region. A hydrogen plasma treatment is performed on the preliminary gate insulation layer to form a gate insulation layer, and the hydrogen plasma treatment supplying a hydrogen-containing gas and an inert gas supply in a chamber via different gas supply parts to form a hydrogen plasma region and an inert gas plasma region in the chamber, respectively. A gate electrode is formed on the gate insulation layer, and impurity regions are formed at upper portions of the substrate adjacent to the gate electrode.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a preliminary gate insulation layer on a substrate, at least a portion of the substrate serving as a channel region;
- performing a hydrogen plasma treatment on the preliminary gate insulation layer to form a gate insulation layer, the hydrogen plasma treatment including,
- supplying a hydrogen-containing gas and an inert gas in a chamber via different gas supply parts to form a hydrogen plasma region and an inert gas plasma region in the chamber, respectively;
- forming a gate electrode on the gate insulation layer;
- and
- forming impurity regions at upper portions of the substrate adjacent to the gate electrode.
A method of manufacturing a semiconductor device, the method comprising:
- forming impurity regions in portions of a substrate, the impurity regions serving as source and drain regions;
- forming an insulating interlayer on the substrate, the insulating layer including an opening exposing a top surface of the substrate between the impurity regions;
- forming a preliminary gate insulation layer on the exposed top surface of the substrate and a sidewall and a top surface of the insulating interlayer;
- performing a hydrogen plasma treatment on the preliminary gate insulation layer to form a gate insulation layer;
- and
- forming a gate electrode on the gate insulation layer, the gate electrode filling the opening.
A method of performing a hydrogen plasma treatment, the method comprising:
- forming an oxide layer on a substrate;
- loading the substrate including the oxide layer in a chamber;
- and
- performing a hydrogen plasma treatment on the oxide layer including,
- forming a hydrogen plasma region over the oxide layer by supplying a hydrogen-containing gas to the chamber via a first gas supply port, and
- forming an inert gas plasma region over the hydrogen plasma region by supplying an inert gas to the chamber via a second gas supply port.
Dependencies are inferred from the claim text.