Display apparatus and manufacturing method of the same

A manufacturing method of a display apparatus comprising:

• a counter substrate including a light shielding layer defining transmissive regions where light passes through and non-transmissive regions where light does not pass through;
• and an active matrix substrate including a pixel area where pixels are arranged in matrix, each of the pixels including the transmissive region and the non-transmissive region both defined by the light shielding layer, the manufacturing method comprising:
• forming source and drain portions by forming on the transparent substrate islands out of a polycrystalline silicon film and doping impurities to both outsides of a portion to be a channel portion, in each of the islands;
• forming a gate insulating film on the polycrystalline silicon film;
• forming gate electrodes on the gate insulating film;
• forming LDD portions located between the neighboring source and drain portions by doping impurities into the islands by using the gate electrodes as masks;
• forming interlayer insulating films on the gate electrodes;
• forming a conductive film as a drain layer on the interlayer insulating films;
• forming the transmissive regions by performing dry etching by using a first resist pattern for separating the conductive film, to form patterned conductive films, the transmissive regions excluding the polycrystalline silicon film, the gate electrodes and the patterned conductive films when being viewed in a normal direction of the transparent substrate;
• and
• performing dry etching by using a second resist pattern for separating again the conductive film in an area between the patterned conductive films, the second resist pattern including openings not overlapping with the transmissive regions and with regions laid over the LDD portions.

A manufacturing method of a display apparatus comprising:

• a counter substrate including a light shielding layer defining transmissive regions where light passes through and non-transmissive regions where light does not pass through;
• and an active matrix substrate including a pixel area where pixels are arranged in matrix, each of the pixels including the transmissive region and the non-transmissive region both defined by the light shielding layer, the manufacturing method comprising:
• forming source and drain portions by forming on the transparent substrate islands out of a polycrystalline silicon film and doping impurities to both outsides of a portion to be a channel portion in each of the islands;
• forming a gate insulating film on the polycrystalline silicon film;
• forming gate electrodes on the gate insulating film;
• forming LDD portions located between the neighboring source and drain portions by doping impurities into the islands by using the gate electrodes as masks;
• forming interlayer insulating films on the gate electrodes;
• forming a conductive film as a drain layer on the interlayer insulating films;
• forming the transmissive regions by performing dry etching by using a first resist pattern for separating the conductive film, to form patterned conductive films, the transmissive regions excluding the polycrystalline silicon film, the gate electrodes and the patterned conductive films when being viewed in a normal direction of the transparent substrate;
• and
• performing dry etching by using a second resist pattern and a third resist pattern, the second resist pattern being a resist pattern for separating again the conductive film in an area between the patterned conductive films, the second resist pattern including openings not overlapping with regions laid over the LDD portions, the third resist pattern being a resist pattern for separating again the conductive film in peripheries of the transmissive regions, with a separation width being equal or less than a separation width of the second resist pattern.