Preparation method of semiconductor device

Abstract

The invention presents a preparation method of semiconductor device, form an amorphous region in the semiconductor substrate, then form the source/drain region of the semiconductor device in the semiconductor substrate, the amorphous region can restrain the generation of end-of-range defects of the source/drain region, then can lower well the current leakage between the semiconductor device source/drain region and the semiconductor substrate; besides, after the dummy gate structure is eliminated, form a short channel inhibition region in the channel region; it can restrain the short-channel effect of the semiconductor device and satisfy the requirement of keeping narrowing the feature size of the device.

Dependencies are inferred from the claim text.