Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsMasaaki OGAWA, Takako MOTAI
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Abstract
A semiconductor device includes a semiconductor layer, a gate insulation film on the semiconductor layer, and a gate electrode on the gate insulation film. The gate electrode includes a first metal compound layer with a first element also contained in the gate insulation film. A first metal layer is on the first metal compound layer, wherein the diffusion coefficient thereof in gold is smaller than the diffusion coefficient thereof in nickel. The first metal layer includes a second element also contained in the first metal compound layer. A gold layer is on the first metal layer. A second metal layer is on the gold layer. Third metal layers are on side surfaces of the gold layer. A source and drain electrode are provided. An interlayer insulation film is on the gate electrode.
Claims20
A semiconductor device comprising:
- a semiconductor layer;
- a gate insulation film disposed on the semiconductor layer;
- agate electrode, including a first metal compound layer comprising a first metal element also included in the gate insulation film, located on the gate insulation film, a first metal layer, the diffusion coefficient of the metal of the metal layer in gold is smaller than the diffusion coefficient thereof in nickel, and comprising a second metal element also present in the first metal compound layer, located on the first metal compound layer, a gold (Au) layer provided on the first metal layer, a second metal layer provided on the gold layer, and third metal layers provided on side surfaces of the gold layer;
- a source electrode;
- a drain electrode;
- and
- an interlayer insulation film located over the second metal layer and the third metal layers on the gate electrode.
A method of forming an electrode comprising gold on a first insulator film on a semiconductor device;
- comprising;
- providing a first barrier layer comprising an element of the a first insulating film and a metal element on the first insulating film;
- providing a second barrier layer comprising metal on the first barrier film, the second barrier film further comprising an element of the first barrier film, wherein the diffusion coefficient of the metal of the second barrier layer in gold is smaller than the diffusion coefficient thereof in nickel.
A conductor structure on an insulator layer in a semiconductor, comprising:
- a first barrier layer comprising at least an element of the insulator layer and a first metal disposed on the insulator layer;
- a second barrier layer comprising the first metal;
- and
- a gold layer disposed over the second barrier layer, wherein
- the diffusion coefficient of the first metal in gold is smaller than the diffusion coefficient of the first metal in nickel.
Dependencies are inferred from the claim text.