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US 2016/0079380 A1Published application
Semiconductor structure and a fabricating method thereof
AssigneeUnited Microelectronics Corp.
InventorsKuan-Yi Tseng, Tzu-Ping Chen, Chun-Lung Chang, Chih-Haw Lee, Wei-Shiang Huang, Chien-Hung Chen
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Abstract
A gate structure is provided. The gate structure includes a substrate, a gate disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate, wherein the gate dielectric layer is in the shape of a barbell. The barbell has a thin center connecting to two bulging ends. Part of the bulging ends extends into the gate and the substrate.
Claims18
A fabricating method of a semiconductor structure comprising:
- forming a gate and a dielectric layer on a substrate, wherein the dielectric layer is disposed between the gate and the substrate;
- removing part of the dielectric layer to form at least two recesses, wherein each of the recesses is defined by part of the gate, part of the dielectric layer and part of the substrate;
- performing a first oxide formation process to transform the gate, the dielectric layer and the substrate defining the recesses into a first silicon oxide layer;
- and
- after the first oxide formation process, performing a second oxide formation process to form a second silicon oxide layer filling the recesses and covering the first silicon oxide layer.
2 more elements
(canceled)
A semiconductor structure, comprising
- a substrate;
- a gate disposed on the substrate;
- and
- a gate dielectric layer disposed between the substrate and the gate, wherein the gate dielectric layer is in a shape of a barbell.
1 more element
Dependencies are inferred from the claim text.