Semiconductor device including first and second misfets
AssigneeRenesas Electronics Corporation
InventorHirofumi TOKITA
Life of this patent
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Abstract
In an n-channel HK/MG transistor including: a gate insulating film made of a first high dielectric film containing La and Hf; and a gate electrode which is formed of a stacked film of a metal film and a polycrystalline Si film and which is formed in an active region in a main surface of a semiconductor substrate and surrounded by an element separation portion formed of an insulating film containing oxygen atoms, a second high dielectric film which contains Hf but whose La content is smaller than a La content of the first high dielectric film is formed below the gate electrode which rides on the element separation portion, instead of the first high dielectric film.
Claims12
A semiconductor device including a first MISFET and a second MISFET, comprising:
- an element separation portion formed in a semiconductor substrate, thereby first and second regions of the semiconductor substrate are defined;
- a first gate insulating film formed over the first region and the element separation portion;
- a second gate insulating film formed over the second region and the element separation portion;
- an interlayer insulating film formed over the first and second regions;
- a first trench formed in the interlayer insulating film and located over the first and second gate insulating films in planar view;
- and
- a first gate electrode embedded in the first trench,
- wherein the first MISFET includes the first gate insulating film and the first gate electrode,
- wherein the second MISFET includes the second gate insulating film and the first gate electrode,
- wherein the first gate insulating film is a different film from the second gate insulating film, and
- wherein, on the element separation portion interposed between the first region and the second region, a length of the first gate insulating film is shorter than a length of the second gate insulating film.
A semiconductor device including a first MISFET and a second MISFET, comprising:
- an element separation portion formed in a semiconductor substrate, thereby first and second regions of the semiconductor substrate are defined;
- a first gate insulating film formed over the first region and the element separation portion;
- a second gate insulating film formed over the second region and the element separation portion;
- an interlayer insulating film formed over the first and second regions;
- a first trench formed in the interlayer insulating film and located over the first and second gate insulating films in planar view;
- and
- a first gate electrode embedded in the first trench,
- wherein the first MISFET includes the first gate insulating film and the first gate electrode,
- wherein the second MISFET includes the second gate insulating film and the first gate electrode,
- wherein a material of the first gate insulating film is different from a material of the second gate insulating film, and
- wherein, on the element separation portion interposed between the first region and the second region, a boundary of the first and second gate insulating films is located on a side of the first gate insulating film.
Dependencies are inferred from the claim text.