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US 2016/0079378 A1Published application
Transistor devices and methods
AssigneeQUALCOMM Incorporated
InventorAntonino Scuderi
Life of this patent
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Abstract
The present disclosure includes transistor devices and methods. In one embodiment, a transistor includes a gate, a source, and a drain. According to one aspect of the disclosure, different resistive paths in the drain are compensated using different gate-to-drain capacitances. According to another aspect of the disclosure, current enters a drain at a center tap point and flows symmetrically outward under two adjacent gates to two adjacent sources.
Claims20
A semiconductor device comprising:
- a transistor comprising a source, a gate, and a drain;
- a conductive material electrically coupled to the drain;
- a non-conductive material between the conductive material and the gate of the transistor,
- wherein the conductive material produces a capacitance between the gate and the drain, and wherein the drain comprises different resistive paths to the source, and wherein the conductive material is tapered along a length of the drain parallel to a length of the gate, and in accordance therewith, the capacitance changes inversely with resistance along the resistive paths.
1 more element
A semiconductor device comprising:
- a transistor comprising a source, a gate, and a drain,
- wherein the drain comprises a length and a width,
- wherein the source comprises a first source finger arranged in parallel with the length of the drain on a first side of the drain and a second source finger arranged in parallel with the length of the drain on a second side of the drain, and
- wherein the gate comprises a first gate finger arranged in parallel with the length of the drain between the first side of the drain and the first source finger and a second gate finger arranged in parallel with the length of the drain between the second side of the drain and the second source finger;
- and
- a conductive material arranged vertically above the drain and at least a portion of the gate of the transistor and in electrical contact with the drain at a midpoint of the length of the drain, wherein the conductive material produces a capacitance between the gate and the drain, wherein the drain comprises different resistive paths to the source, and wherein the conductive material is tapered along a length of the drain parallel to a length of the gate, and in accordance therewith, the capacitance changes inversely with resistance along the resistive paths.
3 more elements
A method comprising:
- coupling a current from a conductive material to a drain of a transistor, the transistor comprising a source, a gate, and said drain;
- coupling the current through the drain, under the gate, and to the source along different resistive paths, wherein a non-conductive material is configured between the conductive material and the gate of the transistor, and wherein the conductive material produces a capacitance between the gate and the drain, and wherein the conductive material is tapered along a length of the drain parallel to a length of the gate, and in accordance therewith, the capacitance changes inversely with resistance along the resistive paths.
Dependencies are inferred from the claim text.