Semiconductor Device with Field Electrode Structure
AssigneeInfineon Technologies Austria AG
InventorsFranz Hirler, Oliver Blank, Ralf Siemieniec
Life of this patent
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Abstract
According to an embodiment a semiconductor device includes a semiconductor body with a mesa section that may include a rectifying structure and a first drift zone section. The mesa section surrounds a field electrode structure that includes a field electrode and a field dielectric sandwiched between the field electrode and the semiconductor body. A maximum horizontal extension of the field electrode in a measure plane parallel to a first surface of the semiconductor body is at most 500 nm.
Claims20
A semiconductor device comprising:
- a semiconductor body comprising a mesa section that comprises a rectifying structure and a first drift zone section;
- a field electrode structure surrounded by the mesa section and comprising a field electrode and a field dielectric sandwiched between the field electrode and the semiconductor body, wherein an extension of the field electrode in a plane approximately parallel to a first surface of the semiconductor body is less than approximately 500 nm.
An electronic assembly, comprising:
- a semiconductor device that comprises a semiconductor body comprising a mesa section that comprises a rectifying structure and a first drift zone section;
- a field electrode structure surrounded by the mesa section and comprising a field electrode and a field dielectric sandwiched between the field electrode and the semiconductor body, wherein an extension of the field electrode in a plane approximately parallel to a first surface of the semiconductor body is less than approximately 500 mm.
A semiconductor device, comprising:
- a semiconductor body comprising mesa sections, each mesa section comprising a rectifying structure and a first drift zone section;
- an at least in segments stripe-shaped field electrode structure sandwiched between two of the mesa sections and comprising a field electrode and a field dielectric sandwiched between the field electrode and the semiconductor body, wherein a width of the field electrode in a plane approximately parallel to a first surface of the semiconductor body is less than approximately 100 nm.
Dependencies are inferred from the claim text.