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US 2016/0079375 A1Published application
Semiconductor device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorYoshitaka Yamazaki
Life of this patent
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Abstract
According to one embodiment, the electrodes are provided in the first semiconductor layer and extend in a first direction. The gate electrodes are provided on the electrodes and extend in the first direction. The interconnection is provided outside ends in the first direction of the gate electrodes, extends in a second direction crossing the first direction, and is commonly connected to the electrodes. The gate contacts are provided on the gate electrodes and connected to the gate electrodes.
Claims20
A semiconductor device comprising:
- a semiconductor layer including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type provided on the first semiconductor layer, and a third semiconductor layer of the first conductivity type provided on the second semiconductor layer;
- a plurality of electrodes provided in the first semiconductor layer and extending in a first direction;
- an insulating film provided between the electrodes and the first semiconductor layer;
- a plurality of gate electrodes provided on the electrodes, opposed to the second semiconductor layer and the third semiconductor layer, and extending in the first direction;
- a gate insulating film provided between the gate electrodes and the second semiconductor layer, and between the gate electrodes and the third semiconductor layer;
- a first interlayer insulating film provided between the electrodes and the gate electrodes;
- an interconnection provided outside ends in the first direction of the gate electrodes, extending in a second direction crossing the first direction, and commonly connected to the electrodes;
- a second interlayer insulating film provided between the ends of the gate electrodes and the interconnection;
- and
- a plurality of gate contacts provided on the gate electrodes and connected to the gate electrodes.
7 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a plurality of first trenches and a second trench in a semiconductor layer, the first trenches extending in a first direction, and the second trench being connected to ends in the first direction of the first trenches and extending in a second direction crossing the first direction;
- forming an insulating film on inner walls of the first trenches and an inner wall of the second trench;
- forming a first film inside the insulating film in the first trenches and in the second trench;
- removing an upper side of the first film in the first trenches;
- forming an interlayer insulating film on the first film left in the first trenches so that the interlayer insulating film is adjacent to the first film in the second trench;
- removing an upper side of a second portion of the interlayer insulating film in a cell region farther from the second trench than a first portion of the interlayer insulating film adjacent to the first film in the second trench, leaving the second portion thinner than the first portion in the cell region, and leaving the first portion thicker than the second portion so that the first portion is adjacent to the first film in the second trench;
- forming a gate electrode on the second portion of the interlayer insulating film left in the cell region;
- and
- forming a gate contact on the gate electrode.
6 more elements
Dependencies are inferred from the claim text.