Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTakeshi UCHIHARA, Wataru SAITO, Takaaki YASUMOTO, Naoko YANASE
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Abstract
A semiconductor device includes a compound semiconductor layer, an insulating element, and a conductive element. The conductive element includes a plurality of conductive regions which are spaced from the compound semiconductor layer in a first direction. The insulating element is provided between the compound semiconductor layer and the conductive element. A length of each of the plurality of conductive regions in a second direction which intersects the first direction becomes longer the farther the individual one of the plurality of conductive regions is spaced from the compound semiconductor layer.
Claims20
A semiconductor device, comprising:
- a compound semiconductor layer;
- a first conductive element including a plurality of conductive regions, each of the plurality of conductive regions spaced a different distance in a first direction from the compound semiconductor layer;
- and
- an insulating element located between the compound semiconductor layer and the first conductive element, and
- wherein a length, along a second direction which intersects the first direction, of each of the plurality of conductive regions is longer in conductive regions which are spaced farther from the compound semiconductor layer than conductive layers spaced from, and closer to the compound semiconductor layer.
A semiconductor device, comprising:
- a compound semiconductor region;
- a multi-layer insulation region overlying the compound semiconductor region, the multi-layer insulation region comprising a first sub-layer directly overlying the compound semiconductor region, a second sub-layer, having a thickness which is greater than the thickness of the first sub-layer, overlying the first sub-layer, and a third sub-layer, having a thickness which is greater than the thickness of the second sub-layer, overlying the second sub-layer;
- a first conductor extending from contact with the compound semiconductor region and through the multi-layer insulation region in a first direction;
- a second conductor extending from contact with the compound semiconductor region and through the multi-layer insulation region in the first direction;
- and
- a third conductor extending, in a second direction intersecting the first direction, over the compound semiconductor region at different distances from the compound semiconductor layer over the length of the third conductor, the third conductor isolated from the compound semiconductor region by the insulation region.
A compound semiconductor device having a compound semiconductor region, comprising:
- an insulation region disposed over the compound semiconductor region and extending thereover in a first direction generally coplanar with the compound semiconductor region;
- and
- at least one conductor having a first portion spaced a first distance from the compound semiconductor region and electrically isolated from the compound semiconductor region and extending a first span distance in the first direction, and a second portion spaced a second distance from the compound semiconductor region and electrically isolated from the compound semiconductor region and extending a second span distance in the first direction.
Dependencies are inferred from the claim text.