Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsChisato FURUKAWA, Masaaki OGAWA, Takako MOTAI
Life of this patent
Estimating the term…
Abstract
According to one embodiment, there is provided a semiconductor device including a first semiconductor layer, a second semiconductor layer, a first insulating film, a first electrode, and a second insulting film. The first semiconductor layer includes a compound semiconductor. The second semiconductor layer is provided on the first semiconductor layer and includes a compound semiconductor. The first insulating film is provided on the second semiconductor layer. The first electrode is provided on the first insulating film. The second insulting film covers at least a portion of the first electrode and has a higher hydrogen concentration than the hydrogen concentration of the first insulating film.
Claims20
A semiconductor device comprising:
- a first semiconductor layer comprising a compound semiconductor;
- a second semiconductor layer provided on the first semiconductor layer and comprising a compound semiconductor;
- a first insulating film provided on the second semiconductor layer;
- a first electrode provided on the first insulating film;
- and
- a second insulting film covering at least a portion of the first electrode and has a higher hydrogen concentration than the hydrogen concentration of the first insulating film.
A semiconductor device, comprising:
- a first semiconductor layer;
- a second semiconductor layer disposed on the first semiconductor layer;
- a strained region located at the contact location of the first semiconductor layer and second semiconductor layer;
- a first conductive later disposed on the second semiconductor layer;
- a first insulating layer disposed over the second semiconductor layer and the first conductive layer;
- and
- a second insulating layer disposed over the first insulating layer, wherein
- the hydrogen concentration of at least a portion of the first insulating layer is below the detection limit of hydrogen using the SIMS method.
A method of forming a semiconductor device having a strained interface region at a connecting portion of a first semiconductor layer and a second semiconductor layer, comprising:
- forming a first insulating layer over the second semiconductor layer, wherein the portion of the first insulating layer contacting the second semiconductor layer has a hydrogen concentration below the detection limit of hydrogen by a SIMS method;
- and
- forming a second insulating layer over the first insulating layer.
Dependencies are inferred from the claim text.