Semiconductor device, semiconductor wafer, and semiconductor device manufacturing method
AssigneeKabushiki Kaisha Toshiba
InventorsNaoharu SUGIYAMA, Kunio TSUDA
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Abstract
According to one embodiment, a nitride semiconductor device including a first semiconductor layer and a second semiconductor layer is provided. The first semiconductor layer is provided on a base, and includes a nitride semiconductor. The first semiconductor layer includes a first region, and a second region which is provided on the first region, has a concentration of Si lower than a concentration of Si in the first region, and is thicker than the first region. The second semiconductor layer is provided on the first semiconductor layer.
Claims20
A semiconductor device comprising:
- a first semiconductor layer provided on a base and including a nitride semiconductor, the first semiconductor layer including a first region, and a second region which is provided on the first region, has a concentration of Si lower than a concentration of Si in the first region, and is thicker than the first region;
- and
- a second semiconductor layer comprising a nitride semiconductor provided on the first semiconductor layer.
A semiconductor wafer comprising:
- a base including a substrate, and a first layer comprising silicon oxide provided on the substrate;
- and
- a first semiconductor layer comprising a nitride semiconductor provided on the first layer of the base, the first semiconductor layer including a first region containing silicon and a second region which is provided on the first region, has a concentration of Si lower than a concentration of Si in the first region, and is thicker than the first region.
A method of manufacturing a semiconductor device, comprising:
- forming a silicon crystal film having a first thickness on a base including a substrate and a first layer provided on the substrate;
- forming a first nitride semiconductor layer including a first region formed on the silicon crystal film and a second nitride semiconductor layer on the first layer;
- and
- forming a second semiconductor layer including a nitride semiconductor on the first semiconductor layer,
- wherein a concentration of Si in the first region is higher than a concentration of Si in the second region, and
- wherein forming the first semiconductor layer includes
- incorporating at least a portion of the silicon crystal film into the nitride semiconductor film, and
- reducing the thickness of the silicon crystal film.
Dependencies are inferred from the claim text.