Semiconductor device

A semiconductor device comprising:

• a first electrode;
• a second electrode;
• and
• a first semiconductor region of a first conductivity-type provided between the first electrode and the second electrode,
• the device including:
• a first element region including
• a second semiconductor of a second conductivity-type region provided between the first semiconductor region and the first electrode,
• a third semiconductor region of the second conductivity-type provided between the first semiconductor region and the second electrode,
• a fourth semiconductor region of the first conductivity-type provided between the third semiconductor region and the second electrode, and
• a third electrode provided in the first semiconductor region, the third semiconductor region and the fourth semiconductor region via a first insulating film,
• a second element region including
• a fifth semiconductor region of the first conductivity-type provided between the first semiconductor region and the first electrode, and the fifth semiconductor region having a higher impurity concentration than the first semiconductor region, and
• a sixth semiconductor region of the second conductivity-type provided between the first semiconductor region and the second electrode, and
• an isolation region including a seventh semiconductor region of the second conductivity-type provided between the first semiconductor region and the second electrode, and the seventh semiconductor region being in contact with the second electrode, the isolation region being positioned between the first element region and the second element region.