Metal-Oxide-Semiconductor Field-Effect Transistor with Extended Gate Dielectric Layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShiuan-Jeng Lin, Shyh-Wei Cheng, Che-Jung Chu
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Abstract
A metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a source and a drain in the substrate, a gate electrode disposed over the substrate between the source and drain, and a gate dielectric layer disposed between the substrate and the gate electrode. At least a portion of the gate dielectric layer is extended beyond the gate electrode toward at least one of the source or the drain.
Claims20
A method of fabricating a metal-oxide-semiconductor field-effect transistor (MOSFET), comprising:
- forming a gate dielectric layer over a substrate;
- forming a gate electrode over the gate dielectric layer, wherein at least a portion of the gate dielectric layer is not covered by the gate electrode;
- and
- forming a source and a drain in the substrate, wherein the gate dielectric layer extends beyond the gate electrode toward at least one of the source or the drain, and wherein the gate dielectric is thicker toward the drain relative its thickness toward the source.
The method of claim 10, further comprising forming a spacer adjacent the gate electrode and at least partially over the gate dielectric layer.
A method of fabricating a metal-oxide-semiconductor field-effect transistor (MOSFET), comprising:
- forming on a substrate a gate oxide layer, the gate oxide layer having a first region with a first thickness and a second region with a second thickness greater than the first thickness;
- forming over the gate oxide layer a gate electrode, the gate electrode layer covering a part of the first region and a part of the second region;
- forming a spacer on a sidewall of the gate electrode and on the gate oxide layer;
- and
- removing the gate oxide layer not covered by the gate electrode and not covered by the spacer.
A method of fabricating a metal-oxide-semiconductor field-effect transistor (MOSFET), comprising:
- forming on a substrate a gate oxide layer;
- forming over the gate oxide layer a patterned gate electrode, the patterned gate electrode layer covering a part of the first region and a part of the second region, the patterned gate electrode extending a first length across a major surface of the substrate;
- patterning the gate oxide layer to form a patterned gate oxide under the patterned gate electrode, the patterned gate oxide extending a length distance across the major surface of the substrate, the second length being greater than the first length.
Dependencies are inferred from the claim text.