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US 2016/0079367 A1Published application
Semiconductor device and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJeong-Ho YOO, Byeong-Chan LEE, Hyun-Ho NOH, Yong-Kook PARK, Bon-Young KOO, Jin-Yeong JOE
Life of this patent
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Abstract
A semiconductor device may have a structure that prevents or reduces an etching amount of certain portions, such as a part of a source/drain region. Adjacent active fins may be merged with a blocking layer extending between adjacent the source/drain region. The blocking layer may be of a material that is relatively high-resistant to the etchant.
Claims23
A semiconductor device comprising:
- a substrate provided with first and second active fins that extend lengthwise in a first direction and are separated in a second direction crossing the first direction by a field insulating layer;
- a gate structure which extends in the second direction on the first and second active fins;
- a first semiconductor pattern formed on the first active fin and disposed at a first side of the gate structure;
- and
- a second semiconductor pattern formed on the second active fin and disposed at the first side of the gate structure,
- wherein the first semiconductor pattern includes:
- a first pattern including a first semiconductor material, and
- a second pattern disposed below a downwardly facing side of the first pattern between the first and second active fins and including a second semiconductor material different from the first semiconductor material, and
- wherein the second semiconductor pattern includes:
- a third pattern including the first semiconductor material, and
- a fourth pattern disposed below a downwardly facing side of the third pattern between the first and second active fins, including the second semiconductor material, and contacting the second pattern.
8 more elements
(canceled)
A semiconductor device comprising:
- first and second active fins which protrude from a substrate, first and second active fins extending in a first direction and separated in a second direction;
- a gate structure which extends in the second direction on the first and second active fins;
- a first semiconductor pattern formed on the first active fin;
- a second semiconductor pattern formed on the second active fin;
- a field insulating layer covering a lower part of both sides of the first and second active fins;
- a third semiconductor pattern formed on and extending from the field insulating layer and contacting the first and second semiconductor patterns in a region between the first and second active fins, the third semiconductor pattern including a first semiconductor material;
- and
- a fourth semiconductor pattern formed on the third pattern and on the first and second semiconductor patterns and including a second semiconductor material different from the first semiconductor material of the third pattern.
5 more elements
17-21. (canceled)
A semiconductor device, comprising:
- a substrate in which a first region and a second region are defined, the substrate being provided with first and second active fins in the first region and third and fourth fins in the second region;
- a first gate structure on the first and second active fins;
- a first semiconductor pattern, formed on the first and second active fins, disposed at least at one side of the first gate structure, and including a first semiconductor material;
- a second semiconductor pattern, formed on downwardly facing surfaces of the first semiconductor pattern between the first and second active fins and including a second semiconductor material different from the first semiconductor material;
- a second gate structure on the third and fourth active fins;
- and
- a third semiconductor pattern, formed on the third and fourth active fins, disposed at least at one side of the second gate structure, and including the second semiconductor material.
4 more elements
27-43. (canceled)
Dependencies are inferred from the claim text.