Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same

Abstract

A method of manufacturing a semiconductor device may include: etching a recess in a semiconductor substrate, where the etching produces a metal residue over a surface of the recess. The recess may thereafter be exposed to a cleaning process that causes the metal residue to etch at least one fissure in the semiconductor substrate. The at least one fissure may extend from the surface of the recess into the semiconductor substrate. The method may further include epitaxially forming a liner comprising a first semiconductor material having a first dopant concentration within the recess and over the at least one fissure. The method proceeds with epitaxially forming a semiconductor layer comprising a second semiconductor material having a second dopant concentration over the liner.

Dependencies are inferred from the claim text.