Silicide Region of Gate-All-Around Transistor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng Ching, Chi-Wen Liu, Chao-Hsiung Wang
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Abstract
The disclosure relates to a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a nanowire structure protruding from the substrate comprising a channel region between a source region and a drain region; a pair of silicide regions extending into opposite sides of the source region, wherein each of the pair of silicide regions comprising a vertical portion adjacent to the source region and a horizontal portion adjacent to the substrate; and a metal gate surrounding a portion the channel region.
Claims21
A semiconductor device comprising:
- a nanowire structure protruding from a substrate, the nanowire structure comprising a channel region between a source region and a drain region;
- a silicide region annularly disposed around the source region, wherein the silicide region comprises a vertical portion adjacent to and annularly disposed around the source region, and a horizontal portion adjacent to the substrate and annularly disposed around the source region;
- and
- a metal gate surrounding a portion of the channel region.
A semiconductor device comprising:
- a nanowire structure protruding from a substrate, the nanowire structure comprising a channel region between a source region and a drain region;
- a silicide region between the source region and the substrate, the silicide region comprising an upper portion adjacent to and annularly surrounding the source region, the upper portion having a first width, and a lower portion adjacent to the substrate and annularly surrounding the source region, the lower portion having a second width greater than the first width;
- and
- a metal gate surrounding a portion of the channel region.
19-20. (canceled)
A semiconductor device comprising:
- a nanowire structure protruding from a substrate having a channel region between a source region and a drain region;
- a first silicide region annularly disposed around the source region, wherein the first silicide region comprises a first vertical portion adjacent to and annularly disposed around the source region, and a horizontal portion adjacent to the substrate and annularly disposed around the source region;
- a second silicide region annularly disposed around the drain region, wherein the second silicide region comprises a second vertical portion adjacent to and annularly disposed around the drain region;
- and
- a metal gate surrounding a portion of the channel region.
Dependencies are inferred from the claim text.