Uniaxially strained nanowire structure
AssigneeIntel Corporation
InventorsStephen M. Cea, Seiyon Kim, Annalisa Cappellani
Life of this patent
Estimating the term…
Abstract
Uniaxially strained nanowire structures are described. For example, a semiconductor device includes a plurality of vertically stacked uniaxially strained nanowires disposed above a substrate. Each of the uniaxially strained nanowires includes a discrete channel region disposed in the uniaxially strained nanowire. The discrete channel region has a current flow direction along the direction of the uniaxial strain. Source and drain regions are disposed in the nanowire, on either side of the discrete channel region. A gate electrode stack completely surrounds the discrete channel regions.
Claims16
A semiconductor device, comprising:
- a uniaxially strained nanowire disposed above a substrate, the uniaxially strained nanowire comprising:
- a discrete channel region disposed in the uniaxially strained nanowire, the discrete channel region having a current flow direction along the direction of the uniaxial strain;
- and
- source and drain regions disposed in the nanowire, on either side of the discrete channel region, wherein the source and drain regions are discrete;
- a gate electrode stack completely surrounding the discrete channel region;
- a first contact completely surrounding the discrete source region;
- and
- a second contact completely surrounding the discrete drain region.
A method of fabricating a semiconductor device, the method comprising:
- forming a uniaxially strained nanowire above a substrate, the uniaxially strained nanowire comprising a discrete channel region formed in the uniaxially strained nanowire, the discrete channel region having a current flow direction along the direction of the uniaxial strain, and comprising source and drain regions formed in the nanowire, on either side of the discrete channel region, wherein the source and drain regions are discrete;
- forming a gate electrode stack completely surrounding the discrete channel region;
- forming a first contact completely surrounding the discrete source region;
- and
- forming a second contact completely surrounding the discrete drain region.
Dependencies are inferred from the claim text.