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US 2016/0079358 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsGerben DOORNBOS, Chun-Hsiung LIN, Chien-Hsun WANG, Carlos H. DIAZ
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Abstract
A semiconductor structure, and methods for forming the semiconductor device are provided. In various embodiments, the semiconductor device includes a substrate, source/drain regions over the substrate, a plurality of nanowires over the substrate and sandwiched by the source/drain regions, a gate dielectric layer surrounding the plurality of nanowires, and a gate layer surrounding the gate dielectric layer.
Claims22
A semiconductor device, comprising:
- a substrate;
- source/drain regions over the substrate;
- a plurality of nanowires over the substrate and sandwiched by the source/drain regions;
- a gate dielectric layer surrounding the plurality of nanowires;
- and
- a gate layer conformally surrounding the gate dielectric layer.
3 more elements
2-4. (canceled)
13-20. (canceled)
Dependencies are inferred from the claim text.