Integrated circuit devices and methods of manufacturing the same

An integrated circuit (IC) device comprising:

• a substrate comprising a device region having at least one fin-type active region and an inter-device isolation region for defining the device region;
• and
• a gate line that extends over the device region and the inter-device isolation region,
• wherein the gate line comprises:
• a first gate portion that extends on the device region to cover the at least one fin-type active region and that has a flat upper surface at a first level;
• and
• a second gate portion that extends to cover the inter-device isolation region while being integrally connected to the first gate portion and that has an upper surface at a second level that is lower than the first level.

An integrated circuit (IC) device comprising:

• a substrate comprising a device region having at least one active region and a first device isolation layer for defining the device region;
• a second device isolation layer on the device region and covering a lower portion of the active region;
• a plurality of conductive lines that cover the active region on the second device isolation layer and that extend over the device region and the first device isolation layer in a direction intersecting the active region, at least one of the plurality of conductive lines comprising a first portion that extends on the device region to cover the active region and the second device isolation layer and has a first thickness on the second device isolation layer and a second portion that extends on the first device isolation layer, while being integrally connected to the first portion and has a second thickness that is smaller than the first thickness, on the first device isolation layer;
• and
• a first contact plug that is formed on the at least one of the plurality of conductive lines and is connected to the second portion.