Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a first semiconductor region of a first conductivity type;
• an element region including:
• a plurality of second semiconductor regions of a second conductivity type extending inwardly of the first semiconductor region in a first direction and arranged along a second direction orthogonal to the first direction,
• a third semiconductor region of the second conductivity type provided on the second semiconductor region,
• a fourth semiconductor region of the first conductivity type selectively provided on the third semiconductor region,
• a gate electrode extending inwardly of the first semiconductor region, and through the third semiconductor region and the fourth semiconductor region;
• a first insulating film disposed between the gate electrode and the first semiconductor region, third semiconductor region and the fourth semiconductor region;
• and
• a first electrode electrically connected to the fourth semiconductor region;
• a terminal region that surrounds the element region, including:
• a plurality of fifth semiconductor regions of the second conductivity type extending inwardly of the first semiconductor region in the first direction and arranged along the second direction, and
• a sixth semiconductor region of the second conductivity type disposed between the first semiconductor region and the fifth semiconductor region, having a dopant concentration of the second conductivity type higher than a dopant concentration of the second conductivity type of the fifth semiconductor region;
• and
• a second electrode electrically connected to the first semiconductor region.