Semiconductor device
AssigneeShindengen Electric Manufacturing Co., Ltd.
InventorMasaaki TOMITA
Life of this patent
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Abstract
It is an objective to improve reverse surge withstand capability of a semiconductor device, for example, a Schottky barrier diode. A p-type semiconductor section 14 includes a p+ type semiconductor portion (first concentration portion) 14a and a p− type semiconductor portion (second concentration portion) 14b, which have different impurity concentrations from each other. Additionally, a part of a side surface 13S of a metal portion 13 and a part of a bottom surface 13B of the metal portion 13 connected to the side surface 13S thereof are in contact with a part of the p+ type semiconductor portion 14a. Further, at least a part of a side surface 14bS of the p− type semiconductor portion 14b is in contact with a side surface 14aS of the p+ type semiconductor portion 14a.
Claims4
A semiconductor device comprising:
- a semiconductor substrate of a first conductive type, the semiconductive substrate having a first surface;
- a guard ring of a second conductivity type opposite to the first conductivity type, the guard ring having a first portion and a second portion, the first portion being in the semiconductor substrate and adjacent to the first surface and
- the second portion being on the semiconductor substrate, and adjacent to the first surface;
- and
- a metal layer on the semiconductive substrate, the metal layer adjacent to the first surface and forming a Schottky junction with the semiconductor substrate so as to be electrically connected to the second portion,
- wherein the metal layer has a cross-section that is rectangular when viewed in a vertical direction,
- a thickness from a bottom surface of the semiconductor substrate to a bottom surface of the metal layer is smaller than a thickness from the bottom surface of the semiconductor substrate to an uppermost surface of the guard ring,
- the first portion of the guard ring includes a first region and a second region connected to the first region, and
- the first region is closer to the metal layer than the second region, and
- the second region is larger in depth in the vertical direction of the semiconductor substrate than the first region.
(canceled)
Dependencies are inferred from the claim text.