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AssigneeNXP B.V.
InventorsTony Vanhoucke, Viet Thanh Dinh, Petrus Hubertus Cornelis Magnee, Ponky Ivo, Dirk Klaassen, Mahmoud Shehab Mohammad Al-Sa'di
Estimating the term…
A semiconductor device comprising a bipolar transistor and a method of making the same. A power amplifier including a bipolar transistor. The bipolar transistor includes a collector including a laterally extending drift region. The bipolar transistor also includes a base located above the collector. The bipolar transistor further includes an emitter located above the base. The bipolar transistor also includes a doped region having a conductivity type that is different to that of the collector. The doped region extends laterally beneath the collector to form a junction at a region of contact between the doped region and the collector. The doped region has a non-uniform lateral doping profile. A doping level of the doped region is highest in a part of the doped region closest to a collector-base junction of the bipolar transistor.
A semiconductor device comprising a bipolar transistor, the bipolar transistor comprising:
(canceled)
A method of manufacturing semiconductor device comprising a bipolar transistor, the method comprising:
Dependencies are inferred from the claim text.