Electronic Device Including An Isolation Structure

An electronic device comprising:

• a substrate;
• a semiconductor layer overlying the substrate and having a primary surface and a first conductivity type;
• and
• an isolation structure comprising:
• a first well region within the semiconductor layer and having the first conductivity;
• a second well region within the semiconductor layer and having a second conductivity type opposite the first conductivity type;
• and
• a third well region within the semiconductor layer having the first conductivity type;
• a buried doped region disposed between the substrate and the electronic component;
• a sinker region extending from the primary surface of the semiconductor layer towards the buried conductive region;
• wherein:
• the buried conductive region and the sinker region have the second conductivity type and are electrically connected to each other;
• and
• each of the buried conductive region and the sinker region is spaced apart from the isolation structure by a portion of the semiconductor layer.

A process of forming an electronic device comprising:

• providing a substrate and a semiconductor layer overlying the substrate, wherein the semiconductor layer has primary surface;
• forming a first well region within the semiconductor layer and having a first conductivity type;
• forming a second well region within the semiconductor layer and having a second conductivity type opposite the first conductivity type;
• forming a third well region within the semiconductor layer having the first conductivity type;
• and
• electrically connecting the first, second, and third well regions to one another,
• wherein in a finished device:
• the second well region is disposed between the first and third well regions;
• and
• the first, second, and third well regions are parts of an isolation structure.