Back to results
US 2016/0079342 A1Published application
Method and device for an integrated trench capacitor
AssigneeGlobalfoundries Inc.
InventorLuke ENGLAND
Life of this patent
Estimating the term…
Abstract
A methodology for forming trench capacitors on an interposer wafer by an integrated process that provides high-capacitance, ultra-low profile capacitor structures and the resulting device are disclosed. Embodiments include forming a polymer block on a front side of an interposer wafer, patterning and etching the polymer block to form one or more trenches, and forming a capacitor on an upper surface of the polymer block and in the one or more trenches.
Claims20
A device comprising:
- a polymer block on a front surface of an interposer wafer;
- and
- a capacitor formed on an upper surface of and in one or more trenches in the polymer block.
A device comprising:
- a polymer block on a front surface of an interposer wafer;
- a first metal layer formed in one or more trenches in the polymer block;
- a dielectric layer formed over the first metal layer;
- and
- a capacitor formed on an upper surface of and in the one or more trenches.
2 more elements
A device comprising:
- a polymer block on a front surface of an interposer wafer;
- a first metal layer formed in trenches in the polymer block;
- a dielectric layer formed over the first metal layer;
- a second metal layer on the dielectric layer;
- and
- a capacitor formed on an upper surface of and in the trenches,
- wherein the trenches have an aspect ratio of 1:20 to 1:25.
4 more elements
Dependencies are inferred from the claim text.