Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising:

• forming an insulating film, a first conductive film, and a stopper film on a semiconductor substrate;
• forming a trench in a first region, the trench penetrating through the stopper film, the first conductive film, and insulating film into the semiconductor substrate;
• forming a device isolation insulator in the trench;
• performing planarization processing using the stopper film as a stopper;
• removing the stopper film;
• forming a second conductive film in contact with the first conductive film;
• forming a conductive member including the first conductive film and the second conductive film in the first region and a second region provided with the insulating film on the semiconductor substrate by selectively removing the second conductive film and the first conductive film;
• and
• forming a first and a second vias connected to the conductive member,
• the first and the second vias being formed at positions on the conductive member so that the conductive member has at least one portion on the first region, the one portion being located between a first portion of the conductive member connected with the first via and a second portion of the conductive member connected with the second via.