Inductor heat dissipation in an integrated circuit

A method comprising:

• forming a first dielectric layer on a semiconductor on insulator (SOI) layer of a SOI substrate, the SOI substrate comprising a buried insulator layer located between the SOI layer and a base substrate layer;
• forming a BEOL dielectric layer on the first dielectric layer;
• forming a cavity trench through the BEOL dielectric layer, the first dielectric layer, and the SOI layer, the cavity trench exposing the buried insulator layer;
• forming a cavity in the buried insulator layer;
• depositing a thermally conductive and electrically isolating material in the cavity;
• filling the cavity trench with the thermally conductive and electrically isolating material;
• and
• forming an inductor above the cavity.

A structure comprising:

• a cavity in a buried insulator layer of a semiconductor on insulator (SOI) substrate, the buried insulator layer located above a base substrate layer and below a SOI layer, the cavity containing a thermally conductive and electrically isolating material;
• a first dielectric layer on the SOI layer;
• a cavity trench extending through the first dielectric layer and the SOI layer into the cavity, the cavity trench containing the thermally conductive and electrically isolating material;
• and
• an inductor above the cavity.