Selector-resistive random access memory cell
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsXuan Anh TRAN, Eng Huat TOH, Shyue Seng TAN, Yuan SUN, Elgin Kiok Boone QUEK
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Abstract
Memory devices and manufacturing methods thereof are presented. A memory device a substrate and a memory cell having at least one selector and a storage element. The selector includes a well of a first polarity type disposed in the substrate, a region of a second polarity type disposed over the well and in the substrate, and first and second regions of the first polarity type disposed adjacent to the region of the second polarity type. The storage element includes a programmable resistive layer disposed on the region of the second polarity type and an electrode disposed over the programmable resistive layer.
Claims20
A device comprising:
- a substrate;
- and
- a memory cell comprising at least one selector and a storage element wherein
- the selector comprises
- a well of a first polarity type disposed in the substrate and a region of a second polarity type disposed over the well and in the substrate,
- first and second regions of the first polarity type disposed adjacent to the region of the second polarity type,
- the storage element comprises
- a programmable resistive layer disposed on the region of the second polarity type and
- an electrode disposed over the programmable resistive layer.
A device comprising:
- a substrate;
- and
- a memory cell comprising first and second memory structures and comprising
- a well of a first polarity type disposed in the substrate and common to the first and second memory structures,
- first and second regions of a second polarity type disposed in the substrate over the well and are separated by a cavity,
- an isolation region disposed in the well and below the cavity,
- a programmable resistive layer lines the cavity,
- an electrode disposed over the programmable resistive layer and within the cavity, and
- first and second layers of the first polarity type disposed over the first and second regions of the second polarity type and adjacent to first and second sides of the programmable resistive layer and electrode.
A method of forming a device comprising:
- providing a substrate;
- forming a memory cell comprising
- forming a well of a first polarity type in the substrate,
- forming at least a first region of a second polarity type adjacent to the well,
- providing a patterned programmable resistive layer and electrode on the substrate,
- forming first and second regions of the first polarity type adjacent to the first region of the second polarity type and adjacent to the programmable resistive layer and electrode.
Dependencies are inferred from the claim text.